Calculate the oxide thickness in nanometers for an NMOS on a p-type substrate.
Inputs (all scalars):
  • NA — acceptor concentration, cm^-3 (e.g., 2e15)
  • VT — threshold voltage, V (e.g., 1)
  • Phi_ms — metal–semiconductor work-function difference, V (e.g., -0.3)
  • epsr_ox — oxide relative permittivity (e.g., 4)
  • epsr_s — semiconductor relative permittivity (e.g., 11.7)
Use these constants (room temperature):
  • ni = 1e10 cm^-3
  • T = 300 K
  • kT/q = 0.02585 V
  • eps0 = 8.85e-14 F/cm
  • q = 1.6e-19 C
Return the thickness in nm.
Solve

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Last Solution submitted on Feb 26, 2026

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