Fermi Level

Fermi Level positioning in Si, Ge, and GaAs as a function of temperature and impurity concentrations

This m-file gives information about some of the semiconductor fundamentals namely, the Fermi-Dirac Integral, Energy Bandgap vs. Temperature, Intrinsic Carrier Density, and Fermi Level position in Si, Ge, and GaAs as a function of temperature and doping concentration (In these figures, the dependence of the Bandgap and Fermi intrinsic level on temperature is also shown).
For the calculation of the Fermi level, the charge neutrality equation is solved numerically assuming Fermi-Dirac statistics instead of Maxwell-Boltzmann statistics. For the foregoing reason, the program can be used to calculate the Fermi Level position either for nondegenerate or degenerate semiconductors.
It is posible to change the doping concentration to a specific value in Fermi_Level.m (line 9).
Journals:
Ref 1: Solid State Electronics, 25, 1067 (1982)
Ref 2: Semiconductor Physical Electronics, Sheng S. Li. pp 89
Ref 3: Physica Status Solidi(b) vol. 188, 1995, pp 635-644
Books:
Semiconductor Physical Electronics
Second Edition. Springer
Sheng S. Li
Advanced Semiconductor Fundamentals
Second Edition. Prentice Hall
Robert F. Pierret

Enjoy!